单脉冲飞秒激光烧蚀制备GaSe晶体表面增透微结构

Laser Damage Pub Date : 2020-10-16 DOI:10.1117/12.2570879

A. Bushunov, A. Teslenko, M. Tarabrin, V. Lazarev, L. Isaenko, A. Eliseev, S. Lobanov, V. N. Vedenyapin

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摘要

GaSe晶体具有很高的菲涅耳损耗，其表面透过率可达77%，是中、远红外非线性光学变换器的重要特点。在本研究中，利用单脉冲飞秒激光烧蚀在GaSe单晶表面制备了抗反射微结构。这种方法可以将传输率提高到92%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of antireflection microstructure on GaSe crystal surface by single-pulse femtosecond laser ablation

GaSe crystals that are promising as nonlinear optical converters in the mid- and far-infrared ranges are charac- terized by high Fresnel losses leading to transmittance per surface at the level of 77%. In this study, antireflection microstructures (ARMs) were fabricated on the surface of the GaSe single crystal by single-pulse femtosecond laser ablation. This method makes it possible to increase the transmission up to up to 92%.

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Laser Damage

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