{"title":"端氢金刚石mosfet直流特性的物理模拟","authors":"Yu Fu, Yuehang Xu, R. Xu, Jianjun Zhou, Y. Kong","doi":"10.1109/EDAPS.2017.8276947","DOIUrl":null,"url":null,"abstract":"A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias VGS of −4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs\",\"authors\":\"Yu Fu, Yuehang Xu, R. Xu, Jianjun Zhou, Y. Kong\",\"doi\":\"10.1109/EDAPS.2017.8276947\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias VGS of −4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.\",\"PeriodicalId\":329279,\"journal\":{\"name\":\"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDAPS.2017.8276947\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2017.8276947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs
A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias VGS of −4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
