Lifeng Wu, Jingkun Fang, H. Yan, Ping Chen, A. Chen, Y. Okamoto, C. Yeh, Zhihong Liu, N. Iwanishi, N. Koike, H. Yonezawa, Y. Kawakami
{"title":"冰川:热载流子门电平电路表征和仿真系统的超大规模集成电路设计","authors":"Lifeng Wu, Jingkun Fang, H. Yan, Ping Chen, A. Chen, Y. Okamoto, C. Yeh, Zhihong Liu, N. Iwanishi, N. Koike, H. Yonezawa, Y. Kawakami","doi":"10.1109/ISQED.2000.838857","DOIUrl":null,"url":null,"abstract":"Gate level circuit simulation on hot carrier degradation is introduced for the first time by the GLACIER system presented in this paper. The inherent advantages such as high speed and high capacity of the gate level simulation as compared to the traditional transistor level hot carrier simulation makes the design-in reliability simulation possible and practical for the deep submicron VLSI circuit designs with millions of transistors. By virtue of a unique ratio based modeling technique, GLACIER system provides a very high accuracy which is mostly within 1% difference of transistor level hot carrier simulation.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"GLACIER: a hot carrier gate level circuit characterization and simulation system for VLSI design\",\"authors\":\"Lifeng Wu, Jingkun Fang, H. Yan, Ping Chen, A. Chen, Y. Okamoto, C. Yeh, Zhihong Liu, N. Iwanishi, N. Koike, H. Yonezawa, Y. Kawakami\",\"doi\":\"10.1109/ISQED.2000.838857\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gate level circuit simulation on hot carrier degradation is introduced for the first time by the GLACIER system presented in this paper. The inherent advantages such as high speed and high capacity of the gate level simulation as compared to the traditional transistor level hot carrier simulation makes the design-in reliability simulation possible and practical for the deep submicron VLSI circuit designs with millions of transistors. By virtue of a unique ratio based modeling technique, GLACIER system provides a very high accuracy which is mostly within 1% difference of transistor level hot carrier simulation.\",\"PeriodicalId\":113766,\"journal\":{\"name\":\"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-03-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2000.838857\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2000.838857","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GLACIER: a hot carrier gate level circuit characterization and simulation system for VLSI design
Gate level circuit simulation on hot carrier degradation is introduced for the first time by the GLACIER system presented in this paper. The inherent advantages such as high speed and high capacity of the gate level simulation as compared to the traditional transistor level hot carrier simulation makes the design-in reliability simulation possible and practical for the deep submicron VLSI circuit designs with millions of transistors. By virtue of a unique ratio based modeling technique, GLACIER system provides a very high accuracy which is mostly within 1% difference of transistor level hot carrier simulation.