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Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)最新文献

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Achieving the quality of verification for behavioral models with minimum effort 用最少的努力达到行为模型的验证质量
Tom Chen, A. Andrews, A. Hajjar, Charles Anderson, M. Sahinoglu
When designing a system in the behavioral level, one of the most important steps to be taken is verifying its functionality before it is released to the logic/PD design phase. One may consider behavioral models as oracles in industries to test against when the final chip is produced. In this work, we use branch coverage as a measure for the quality of verifying/testing behavioral models. Minimum effort for achieving a given quality level can be realized by using the proposed stopping rule. The stopping rule guides the process to switch to a different testing strategy using different types of patterns, i.e. random vs. functional, or using different set of parameters to generate patterns/test cases, when the current strategy is expected not to increase the coverage. We demonstrate the use of the stopping rule on two complex behavioral level VHDL models that were tested for branch coverage with 4 different testing phases. We compare savings of the number of applied testing patterns and quality of testing both with and without using the stopping rule, and show that switching phases at certain points guided by the stopping rule would yield to the same or even better coverage with less number of testing patterns.
在行为层面设计系统时,最重要的步骤之一是在将其发布到逻辑/PD设计阶段之前验证其功能。人们可以将行为模型视为行业中的预言器,以便在最终芯片生产出来时进行测试。在这项工作中,我们使用分支覆盖率作为验证/测试行为模型质量的度量。通过使用所提出的停止规则,可以实现达到给定质量水平的最小努力。停止规则指导过程切换到使用不同类型模式的不同测试策略,即随机vs功能,或者使用不同的参数集来生成模式/测试用例,当当前策略被期望不增加覆盖率时。我们在两个复杂的行为级别VHDL模型上演示了停止规则的使用,这些模型通过4个不同的测试阶段测试了分支覆盖率。我们比较了在使用和不使用停止规则的情况下所节省的应用测试模式的数量和测试的质量,并表明在由停止规则指导的某些点上的切换阶段将产生相同的甚至更好的覆盖,使用更少的测试模式。
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引用次数: 9
Realistic worst-case modeling by performance level principal component analysis 基于性能水平主成分分析的现实最坏情况建模
A. Nardi, A. Neviani, C. Guardiani
A new algorithm to determine the number and value of realistic worst-case models for the performance of module library components is presented in this paper. The proposed algorithm employs principal components analysis (PCA) at the performance level to identify the main independent sources of variance for the performance of a set of library modules. Response surfaces methodology (RSM) and propagation of variance (POV) based algorithms are used to efficiently compute the performance level covariance matrix and nonlinear maximum likelihood optimization to trace back worst case models at the SPICE level. The effectiveness of the proposed methodology has been demonstrated by determining a realistic set of worst case models for a 0.25 /spl mu/m CMOS standard cell library.
提出了一种确定模块库组件性能的实际最坏情况模型个数和值的新算法。该算法在性能层面采用主成分分析(PCA)来识别一组库模块性能的主要独立方差源。采用响应面法(RSM)和基于方差传播(POV)的算法高效地计算性能级协方差矩阵和非线性最大似然优化,在SPICE级追溯最坏情况模型。通过确定0.25 /spl mu/m CMOS标准单元库的一组现实的最坏情况模型,证明了所提出方法的有效性。
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引用次数: 1
Combining advanced process technology and design for systems level integration 结合先进的工艺技术和系统级集成设计
A. Hunter, C. Lau, J. Martin
Recent advances in process and integration are enabling systems level integration for numerous applications. The quality of the systems depends directly on the quality of the processes and effectiveness of the process integration, and on the quality of the designs and libraries employed, as well as on the completeness and accuracy of the models used to link the process and designs. Unit process and process module quality is ensured through the use of designed experimentation, margin analysis, and statistical capability measurement. The link between the processes and the libraries and designs is formed through such models as SPICE and interconnect, with quality implications associated with the extraction and implementation. GDSII algorithms to incorporate process specific post layout features such as OPC and fill patterns for CMP planarization are integrated into the CAD flow prior to final verification, reticle manufacturing and silicon prototyping. Foundry specific challenges in providing process and library elements include multiple design flows, tool providers and library suppliers. Examples of approaches to quality designs, processes and systems are presented using advanced cores and systems level integration.
过程和集成方面的最新进展使许多应用程序能够进行系统级集成。系统的质量直接取决于过程的质量和过程集成的有效性,取决于所采用的设计和库的质量,以及用于连接过程和设计的模型的完整性和准确性。通过使用设计的实验、余量分析和统计能力测量来确保单元过程和过程模块的质量。过程与库和设计之间的联系是通过SPICE和interconnect等模型形成的,具有与提取和实现相关的质量含义。GDSII算法将工艺特定的后布局功能(如OPC和CMP平面化的填充模式)集成到最终验证,光栅制造和硅原型制作之前的CAD流程中。在提供流程和库元素方面,铸造厂面临的具体挑战包括多个设计流程、工具提供商和库供应商。方法的质量设计,过程和系统的例子提出了使用先进的核心和系统级集成。
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引用次数: 4
A proposal for accurately modeling frequency-dependent on-chip interconnect impedance 一种精确建模频率相关片上互连阻抗的方法
Li-Fu Chang, Keh-Jeng Chang, Christopher J. Bianchi
Skin effects should be considered for accurate deep-submicron (DSM, 0.35 /spl mu/m and below) interconnect modeling. Conventionally the sheet-/spl rho/ for uniform or plasma-etched conductors is reasonably constant, so the frequency-dependent skin effect can be found by straightforward field simulations, which require sheet-/spl rho/ being constant. In that case, the skin-depth is primarily function of harmonic frequency and the environment. However, for damascene-processed conductors, the sheet-/spl rho/ is function of line width. Therefore, the impedance (resistance and inductance in this paper) has to be determined by field solvers using a new methodology we propose in this paper. For each DSM technology, sets of interconnect structures with comprehensive range of line widths and neighbors for each metal level are provided and simulated in advance. In this way, a library for each DSM technology is available for accurate and efficient VLSI interconnect modeling.
对于精确的深亚微米(DSM, 0.35 /spl mu/m及以下)互连建模,应考虑集肤效应。通常,对于均匀导体或等离子体蚀刻导体,薄片/spl rho/是相当恒定的,因此可以通过直接的场模拟发现频率相关的趋肤效应,这需要薄片/spl rho/是恒定的。在这种情况下,皮肤深度主要是谐波频率和环境的函数。然而,对于大马士革加工的导体,片/spl rho/是线宽的函数。因此,阻抗(本文中的电阻和电感)必须使用我们在本文中提出的新方法由场求解器确定。对于每一种DSM技术,都提供了一组线宽范围全面的互连结构,并对每个金属水平的相邻结构进行了预先仿真。通过这种方式,每个DSM技术的库可用于精确和高效的VLSI互连建模。
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引用次数: 2
Synthesis experiments and performance metrics for evaluating the quality of IP blocks and megacells 用于评估IP块和巨细胞质量的综合实验和性能指标
T. Bautista, A. Núñez
A complete quantitative evaluation of the quality of more than one hundred implementations of SPARC processor core and its related circuitry, synthesized from VHDL descriptions, is presented in this paper as a demonstration example for selecting benchmark circuits, synthesis experiments with different tools and technologies, and performance metrics, for evaluating the quality of IP blocks and megacells. The methodology of the experiments conducted for these circuits can be applied to a wide range of other benchmark candidate circuits. The synthesis experiments are designed to fully explore the synthesis space and to analyze the impact of every synthesis step on the final design quality obtained.
本文对一百多个SPARC处理器核心及其相关电路的质量进行了完整的定量评估,并根据VHDL描述进行了综合,作为选择基准电路、不同工具和技术的综合实验以及性能指标的演示示例,用于评估IP块和巨细胞的质量。对这些电路进行的实验方法可以应用于广泛的其他基准候选电路。设计合成实验是为了充分探索合成空间,分析每个合成步骤对最终获得的设计质量的影响。
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引用次数: 4
GLACIER: a hot carrier gate level circuit characterization and simulation system for VLSI design 冰川:热载流子门电平电路表征和仿真系统的超大规模集成电路设计
Lifeng Wu, Jingkun Fang, H. Yan, Ping Chen, A. Chen, Y. Okamoto, C. Yeh, Zhihong Liu, N. Iwanishi, N. Koike, H. Yonezawa, Y. Kawakami
Gate level circuit simulation on hot carrier degradation is introduced for the first time by the GLACIER system presented in this paper. The inherent advantages such as high speed and high capacity of the gate level simulation as compared to the traditional transistor level hot carrier simulation makes the design-in reliability simulation possible and practical for the deep submicron VLSI circuit designs with millions of transistors. By virtue of a unique ratio based modeling technique, GLACIER system provides a very high accuracy which is mostly within 1% difference of transistor level hot carrier simulation.
本文首次采用GLACIER系统对热载流子退化进行门级电路仿真。门级仿真与传统晶体管级热载流子仿真相比,具有速度快、容量大等固有优势,这使得设计可靠性仿真在数百万晶体管的深亚微米VLSI电路设计中成为可能和实用。凭借独特的基于比率的建模技术,GLACIER系统提供了非常高的精度,其精度在晶体管级热载流子模拟的1%以内。
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引用次数: 27
A transition based BIST approach for passive analog circuits 无源模拟电路中基于转换的BIST方法
A. Walker, P. Lala
A new mixed-signal built-in self-test approach that is based upon voltage transitions at the primary output of the analog block under test (CUT) is presented in this paper. This CUT output is the pulse response of the CUT for a rail-to-rail pulse stream. The technique can effectively detect both soft and hard faults and does not require an analog-to-digital converter (ADC) or/and digital-to-analog converter (DAC). This approach also does not require any additional analog circuits to realize the test signal generator and sample circuits. The paper is concluded with an example of the application of the proposed approach for a passive second order notch filter.
本文提出了一种基于被测模拟块初级输出电压转换的混合信号内置自检方法。这个CUT输出是CUT对轨到轨脉冲流的脉冲响应。该技术可以有效地检测软故障和硬故障,并且不需要模数转换器(ADC)或数模转换器(DAC)。这种方法也不需要任何额外的模拟电路来实现测试信号发生器和采样电路。最后给出了该方法在无源二阶陷波滤波器中的应用实例。
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引用次数: 1
Measuring design quality by measuring design complexity 通过测量设计复杂性来衡量设计质量
M. Keating
Chips continue to get larger and more complex, and as they do, design quality continues to become more difficult and more important. Improving quality metrics is a key to addressing this problem, both for measuring quality and for predicting design quality early in the design cycle. This paper proposes a method of quantifying design complexity, enabling design teams to produce architectures and implementations that manage complexity, and hence quality, effectively.
芯片变得越来越大,越来越复杂,同时,设计质量也变得越来越困难和重要。改进质量度量是解决这个问题的关键,无论是在设计周期的早期测量质量还是预测设计质量。本文提出了一种量化设计复杂性的方法,使设计团队能够产生管理复杂性的体系结构和实现,从而有效地管理质量。
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引用次数: 29
ESD: design for IC chip quality and reliability ESD:设计对IC芯片的质量和可靠性
C. Duvvury
ESD is a major concern for IC chip quality both from building-in-reliability requirement and from long-term field operation requirement. The damage phenomena, either from human handling or machine contact, could appear as thermal damage and oxide rupture. In this paper, the IC damage phenomena due to ESD, the effects on the IC functionality, the proper methods to overcome these with on-chip protection designs, and the challenges facing these protection methods with the advanced process and package technologies are presented. Simulation and modeling methods that are currently used to improve the protection designs are also reviewed.
ESD是集成电路芯片质量的主要关注点,无论是从可靠性要求还是从长期现场操作要求来看都是如此。无论是人为操作还是机器接触造成的损伤现象,都可能出现热损伤和氧化破裂。本文介绍了由静电放电引起的集成电路损伤现象、对集成电路功能的影响、采用片内保护设计来克服这些问题的方法,以及在先进的工艺和封装技术下这些保护方法所面临的挑战。对目前用于改进保护设计的仿真和建模方法进行了综述。
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引用次数: 7
Crosstalk aware static timing analysis: a two step approach 相声感知静态时序分析:两步法
B. Franzini, C. Forzan, D. Pandini, Primo Scandolara, A. Fabbro
Interconnect parasitic effects are one of the limiting factors for the performances of deep submicron VLSI designs, where the interconnect induced delay, dominates over the gate delay. Furthermore, as coupling capacitance between wires increases due to the geometry scaling, the design verification process must accurately take into account crosstalk induced effects. In this paper, we describe CASTA (Crosstalk Aware Static Timing Analysis), a new efficient and accurate methodology for the timing performance verification of large VLSI designs, which accurately considers the crosstalk induced delay and noise injection. Our approach is based on the combination of Static Timing Analysis (STA) with interconnect network order reduction macromodeling techniques and it allows us to evaluate the crosstalk effects during gate-level delay calculation, thus enlightening potential timing hazards. The timing effects due to the crosstalk between adjacent interconnects are accounted by a order reduction based macromodel of the overall linear interconnect network. The effectiveness of the proposed methodology has been demonstrated with the analysis of the crosstalk effects on a 0.25 /spl mu/m, high density CMOS technology.
互连寄生效应是深亚微米VLSI设计性能的限制因素之一,其中互连诱导延迟占主导地位。此外,由于几何缩放导致导线之间的耦合电容增加,设计验证过程必须准确地考虑串扰诱导效应。在本文中,我们描述了CASTA(串扰感知静态时序分析),这是一种新的高效准确的方法,用于大型VLSI设计的时序性能验证,它准确地考虑了串扰引起的延迟和噪声注入。我们的方法是基于静态时序分析(STA)和互连网络降阶宏观建模技术的结合,它允许我们在门级延迟计算期间评估串扰效应,从而揭示潜在的时序危害。相邻互连间串扰的时序效应由基于降阶的整体线性互连网络宏观模型来考虑。通过对0.25 /spl μ m高密度CMOS技术的串扰效应分析,证明了所提出方法的有效性。
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引用次数: 39
期刊
Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)
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