{"title":"低压矩形膜压阻式金属表的仿真研究","authors":"M.Y. Hamid, U. Thangamani, P. Vaya","doi":"10.1109/SMELEC.2006.381070","DOIUrl":null,"url":null,"abstract":"Piezo-resistive metal gauge on rectangular membrane design and its simulation for low pressure application is presented in this paper. Small deflection analytical equations are derived for both simply supported and clamped edge boundary conditions. The design and orientation of grid pattern on rectangular membrane is based on ANSYS simulation results. It is used to find out maximum strain locations to achieve high sensitivity. Maximum of 0.3509 micro strain and maximum resistance change in grid = 90.6271 micro-ohm are achieved for an applied load of ImPa. The sensitivity of the gauge is 0.35 muepsiv/mPa.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Simulation of Piezo-Resistive Metal Gauge on Rectangular Membrane for Low Pressure Application\",\"authors\":\"M.Y. Hamid, U. Thangamani, P. Vaya\",\"doi\":\"10.1109/SMELEC.2006.381070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Piezo-resistive metal gauge on rectangular membrane design and its simulation for low pressure application is presented in this paper. Small deflection analytical equations are derived for both simply supported and clamped edge boundary conditions. The design and orientation of grid pattern on rectangular membrane is based on ANSYS simulation results. It is used to find out maximum strain locations to achieve high sensitivity. Maximum of 0.3509 micro strain and maximum resistance change in grid = 90.6271 micro-ohm are achieved for an applied load of ImPa. The sensitivity of the gauge is 0.35 muepsiv/mPa.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.381070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.381070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of Piezo-Resistive Metal Gauge on Rectangular Membrane for Low Pressure Application
Piezo-resistive metal gauge on rectangular membrane design and its simulation for low pressure application is presented in this paper. Small deflection analytical equations are derived for both simply supported and clamped edge boundary conditions. The design and orientation of grid pattern on rectangular membrane is based on ANSYS simulation results. It is used to find out maximum strain locations to achieve high sensitivity. Maximum of 0.3509 micro strain and maximum resistance change in grid = 90.6271 micro-ohm are achieved for an applied load of ImPa. The sensitivity of the gauge is 0.35 muepsiv/mPa.
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