J. Hacker, M. Urteaga, D. Mensa, R. Pierson, Mike E. B. Jones, Z. Griffith, M. Rodwell
{"title":"250nm InP DHBT单片放大器，在324 GHz时具有4.8 dB增益","authors":"J. Hacker, M. Urteaga, D. Mensa, R. Pierson, Mike E. B. Jones, Z. Griffith, M. Rodwell","doi":"10.1109/MWSYM.2008.4633188","DOIUrl":null,"url":null,"abstract":"An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based common-base monolithic power amplifier has been fabricated and has a measured small signal gain of 4.8 dB at 324 GHz. This is the highest frequency DHBT MMIC amplifier reported to date. The submillimeter-wave power amplifier MMIC incorporates microstrip transmission lines on a 10-μm thick layer of BCB dielectric. The thick BCB layer provides mode-free low-loss millimeter-wave transmission lines without requiring a thin fragile InP substrate and through-wafer VIAs as with conventional microstrip placed directly on the semiconductor substrate. The single-stage power amplifier has a compact size of only 0.124 mm2 and a measured saturated output power of 1.3 milliWatts with a dc input power of 1.4 V at 12 mA. These results demonstrate the capability of 250nm InP DHBT technology to enable power amplifiers for submillimeter-wave applications.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":"{\"title\":\"250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz\",\"authors\":\"J. Hacker, M. Urteaga, D. Mensa, R. Pierson, Mike E. B. Jones, Z. Griffith, M. Rodwell\",\"doi\":\"10.1109/MWSYM.2008.4633188\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based common-base monolithic power amplifier has been fabricated and has a measured small signal gain of 4.8 dB at 324 GHz. This is the highest frequency DHBT MMIC amplifier reported to date. The submillimeter-wave power amplifier MMIC incorporates microstrip transmission lines on a 10-μm thick layer of BCB dielectric. The thick BCB layer provides mode-free low-loss millimeter-wave transmission lines without requiring a thin fragile InP substrate and through-wafer VIAs as with conventional microstrip placed directly on the semiconductor substrate. The single-stage power amplifier has a compact size of only 0.124 mm2 and a measured saturated output power of 1.3 milliWatts with a dc input power of 1.4 V at 12 mA. These results demonstrate the capability of 250nm InP DHBT technology to enable power amplifiers for submillimeter-wave applications.\",\"PeriodicalId\":273767,\"journal\":{\"name\":\"2008 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"41\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2008.4633188\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2008.4633188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz
An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based common-base monolithic power amplifier has been fabricated and has a measured small signal gain of 4.8 dB at 324 GHz. This is the highest frequency DHBT MMIC amplifier reported to date. The submillimeter-wave power amplifier MMIC incorporates microstrip transmission lines on a 10-μm thick layer of BCB dielectric. The thick BCB layer provides mode-free low-loss millimeter-wave transmission lines without requiring a thin fragile InP substrate and through-wafer VIAs as with conventional microstrip placed directly on the semiconductor substrate. The single-stage power amplifier has a compact size of only 0.124 mm2 and a measured saturated output power of 1.3 milliWatts with a dc input power of 1.4 V at 12 mA. These results demonstrate the capability of 250nm InP DHBT technology to enable power amplifiers for submillimeter-wave applications.
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