采用耗尽模式PHEMT的两级MMIC中功率放大器，用于5.8GHz应用

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI:10.1109/RSM.2013.6706512

A. Rasmi, A. Marzuki, M. Ismail, N. A. Ngah, A. Rahim

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引用次数: 2

摘要

采用0.5um商用砷化镓伪晶高电子迁移率晶体管(PHEMT)技术，设计了一种适用于5.8 GHz应用的两级单片微波集成电路(MMIC)中功率放大器(MPA)。仿真结果表明，两级MPA的相关增益为16.39dB, P1dB为20.18dBm，功率增益为15.18 dB, PAE为25.30%。然而，测量性能表明，两级MPA可获得8.33dB的相关增益。在漏极电压5.0V时，VDS和栅极电压0V时，VGS;该MPA的模拟总电流为111mA，实测总电流为200.2mA。芯片尺寸为1.7 × 0.85 mm2。

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Two-stage MMIC medium power amplifier using depletion mode PHEMT for 5.8GHz applications

The design and performances of two-stage monolithic microwave integrated circuit (MMIC) medium power amplifier (MPA) for 5.8 GHz applications are presented using a 0.5um commercial GaAs pseudomorphic high electron mobility transistor (PHEMT) technology. The simulated performance shows a two-stage MPA are achieves an associated gain of 16.39dB, P1dB of 20.18dBm, power gain of 15.18 dB and the PAE of 25.30%. While, the measured performance shows a two-stage MPA is achieves an associated gain of 8.33dB. At 5.0V of drain voltage, VDS and 0V of gate voltage, VGS; this MPA consume 111mA of simulated total current and 200.2mA of measured total current. The chip size is 1.7 × 0.85 mm2.

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RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics

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