异质结的带间隧穿:半经典与量子计算

A. Ajoy
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引用次数: 2

摘要

带到带隧道效应决定了隧道场效应管(tfet)的导通电流。有必要审查和重新校准TCAD工具中使用的BTBT模型,这些工具是在BTBT本质上是一种泄漏现象时开发的。在这里,我们考虑了交错异质结在高导通电流tfet设计中的应用。我们使用一个简单的1-D系统,并比较了用半经典WKB方法计算的BTBT估计和用波函数匹配程序从Schrödinger方程的解中得到的估计。我们发现WKB方法明显高估了通过异质结的隧道电流。
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Band to band tunneling in heterojunctions: Semi-classical versus quantum computation
Band-to-band tunneling (BTBT) determines the on-current in tunnel FETs (TFETs). There is a need to review and recalibrate BTBT models used in TCAD tools, which were developed when BTBT was essentially a leakage phenomenon. Here, we consider the process of BTBT through staggered heterojunctions which find application in the design of TFETs having high on-currents. We use a simple 1-D system and compare the estimates of BTBT computed with a semi-classical WKB approach and that obtained from a solution of Schrödinger's equation by a wavefunction matching procedure. We show that the WKB method significantly overestimates the tunneling current through heterojunctions.
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