Electrical Characteristics of InSe-based Field-effect Transistors

To understand and optimize the eletrical properties of two-dimensional (2D) Van der Waals material is crucial since the thickness of the material can substantially affect the field of 2D material based eletronic devices and other applications. The main objective of this study is to investigate the most important parameters for examing the performance of FETs, carrier mobility (µ) and threshold voltage (Vth) of indium selenide (InSe) based field-effect transistor. We believe that analyzing the thickness of 2D materials is essential for the performance enhancement of FETs in a variety of electronic and optoelectronic applications. We hope this result can be assisted in performance enhancement of complementary metal-oxide-semiconductor (CMOS) inverter and logic circuit applications.