二茂铁/卟啉在碳纳米管阵列上的混合组装,用于多比特信息存储

Jingxian Yu, S. Mathew, B. Flavel, J. Quinton, M. Johnston, J. Shapter
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引用次数: 1

摘要

钌卟啉功能化的单壁碳纳米管阵列利用金属离子的轴向配位直接锚定在硅(100)表面的4-氨基吡啶预组装的单壁碳纳米管(SWCNTs-Si)上。利用红外光谱(IR)、差分脉冲伏安法(DPV)和循环伏安法监测了这些卟啉钌功能化单壁碳纳米管阵列电极(RuTPP-SWCNTs-Si)的形成。通过改变沉积溶液中两种氧化还原活性物质的比例,实现了二茂铁/卟啉在碳纳米管阵列上的混合组装。这些结果表明,这些卟啉钌修饰电极是分子记忆器件的优秀候选者。
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Mixed assembly of ferrocene/porphyrin onto carbon nanotube arrays towards multibit information storage
Ruthenium porphyrin functionalised single-walled carbon nanotube arrays have been prepared using coordination of the axial position of the metal ion onto 4-aminopyridine pre-assembled single-walled carbon nanotubes directly anchored to a silicon(100) surface (SWCNTs-Si). The formation of these ruthenium porphyrin functionalised single-walled carbon nanotube array electrodes (RuTPP-SWCNTs-Si) has been monitored using infra-red spectroscopy (IR), differential pulse voltammetry (DPV), and cyclic voltammetry. Mixed assembly of ferrocene/porphyrin onto carbon nanotube arrays has been achieved by altering the ratio of two redox-active species in the deposition solution. These results suggest these ruthenium porphyrin modified electrodes are excellent candidates for molecular memory devices.
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