T. Umeda, Y. Hirano, D. Suzuki, A. Tone, T. Inoue, H. Kikuchihara, M. Miura-Mattausch, H. Mattausch
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Compact modeling and parameter extraction strategy of normally-on MOSFET
The additional channel-dopant layer of normally-on MOSFETs leads to accumulation-layer current near channel surface and deeper-lying neutral-region current above the p/n junction, which dominate bias conditions above and below flat-band, respectively. The developed compact model accurately captures these currents and exploits their different bias-condition properties for efficient parameter extraction.
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