{"title":"基于28纳米CMOS技术的高线性6ghz相位插补器","authors":"Amr AbdelHadi, M. Allam, S. Ibrahim","doi":"10.1109/JEC-ECC.2017.8305774","DOIUrl":null,"url":null,"abstract":"This paper represents a wide-band low-power phase interpolator(PI) with high-linearity phase steps designed for Mobile industry Processor Interface(MIPI) standards like Multi-media Physical layer (MPHY) High speed Gear 2 that operates at 3GBps to HS-Gear 4 that operates at 6Gbps. The proposed PI consists of an input current-starved circuit for slew rate control, a core PI with cross coupled and diode connected loads, CML-to-CMOS output circuit, and a PI digital controller. The differential non-linearity(DNL) and integral non-linearity(INL) are within 0.15 LSB and 0.27 LSB respectively, The circuit is implemented in a 28-nm CMOS technology and operates from 1.5 to 6 GHz. The circuit consumes 2.2 mW from 0.9-V supply when operates at 6 GHz.","PeriodicalId":406498,"journal":{"name":"2017 Japan-Africa Conference on Electronics, Communications and Computers (JAC-ECC)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A high-linearity 6-GHz phase interpolator in 28-nm CMOS technology\",\"authors\":\"Amr AbdelHadi, M. Allam, S. Ibrahim\",\"doi\":\"10.1109/JEC-ECC.2017.8305774\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper represents a wide-band low-power phase interpolator(PI) with high-linearity phase steps designed for Mobile industry Processor Interface(MIPI) standards like Multi-media Physical layer (MPHY) High speed Gear 2 that operates at 3GBps to HS-Gear 4 that operates at 6Gbps. The proposed PI consists of an input current-starved circuit for slew rate control, a core PI with cross coupled and diode connected loads, CML-to-CMOS output circuit, and a PI digital controller. The differential non-linearity(DNL) and integral non-linearity(INL) are within 0.15 LSB and 0.27 LSB respectively, The circuit is implemented in a 28-nm CMOS technology and operates from 1.5 to 6 GHz. The circuit consumes 2.2 mW from 0.9-V supply when operates at 6 GHz.\",\"PeriodicalId\":406498,\"journal\":{\"name\":\"2017 Japan-Africa Conference on Electronics, Communications and Computers (JAC-ECC)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Japan-Africa Conference on Electronics, Communications and Computers (JAC-ECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/JEC-ECC.2017.8305774\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Japan-Africa Conference on Electronics, Communications and Computers (JAC-ECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/JEC-ECC.2017.8305774","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-linearity 6-GHz phase interpolator in 28-nm CMOS technology
This paper represents a wide-band low-power phase interpolator(PI) with high-linearity phase steps designed for Mobile industry Processor Interface(MIPI) standards like Multi-media Physical layer (MPHY) High speed Gear 2 that operates at 3GBps to HS-Gear 4 that operates at 6Gbps. The proposed PI consists of an input current-starved circuit for slew rate control, a core PI with cross coupled and diode connected loads, CML-to-CMOS output circuit, and a PI digital controller. The differential non-linearity(DNL) and integral non-linearity(INL) are within 0.15 LSB and 0.27 LSB respectively, The circuit is implemented in a 28-nm CMOS technology and operates from 1.5 to 6 GHz. The circuit consumes 2.2 mW from 0.9-V supply when operates at 6 GHz.