{"title":"迁移率随载流子密度幂律依赖的场效应器件的阈值电压提取方法","authors":"V. Mosser, David Seron, Y. Haddab","doi":"10.1109/ICMTS.2015.7106121","DOIUrl":null,"url":null,"abstract":"We propose a new method suited for the extraction of the threshold voltage in 2D Field-Effect-Transistors. It can be applied to various classes of devices where the mobility exhibits a power-law dependence on carrier concentration, μ ∝ n<sub>S</sub><sup>α</sup>. The result doesn't depend on contact resistance. The method provides a physically sound value: V<sub>G</sub>-V<sub>T</sub> is proportional to the channel carrier density as checked with V<sub>G</sub>-dependent Hall measurements in companion gated Hall devices.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density\",\"authors\":\"V. Mosser, David Seron, Y. Haddab\",\"doi\":\"10.1109/ICMTS.2015.7106121\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a new method suited for the extraction of the threshold voltage in 2D Field-Effect-Transistors. It can be applied to various classes of devices where the mobility exhibits a power-law dependence on carrier concentration, μ ∝ n<sub>S</sub><sup>α</sup>. The result doesn't depend on contact resistance. The method provides a physically sound value: V<sub>G</sub>-V<sub>T</sub> is proportional to the channel carrier density as checked with V<sub>G</sub>-dependent Hall measurements in companion gated Hall devices.\",\"PeriodicalId\":177627,\"journal\":{\"name\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2015.7106121\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106121","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density
We propose a new method suited for the extraction of the threshold voltage in 2D Field-Effect-Transistors. It can be applied to various classes of devices where the mobility exhibits a power-law dependence on carrier concentration, μ ∝ nSα. The result doesn't depend on contact resistance. The method provides a physically sound value: VG-VT is proportional to the channel carrier density as checked with VG-dependent Hall measurements in companion gated Hall devices.
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