An Fe-InP buried 1.3-μm double heterostructure laser heteroepitaxially grown on Si

Opto-electronic integrated circuits (OEICs), especially photonic devices on Si, are attractive because of their potential to combine photonic functions with highly integrated silicon electronic circuits. We have already demonstrated long term cw operation of a 1.5-μm multiple quantum well laser1) and high-temperature cw operation of a 1.3-μm double heterostructure (DH) laser2) heteroepitaxially grown on Si. Low threshold current lasers are required to reduce the power consumption of OEICs. An effective approach to reduce the threshold current is burying lasers with semi-insulating InP. The semi-insulating buried structure is also indispensable to reduce parasitic capacitance for high-frequency operation. Though a semi-insulating InP layer has been successfully grown on a Si substrate,3) there are no reports on its application to devices on Si.