Ga2O3 RESURF区无结功率晶体管击穿电压的改进

M. R., K. S. Nikhil
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引用次数: 0

摘要

从最近报道的研究中可以清楚地看出,由于Ga2O3具有更高的带隙,因此可以提供更高的击穿电压。然而,基于Ga2O3的功率器件面临着载流子浓度低和电子迁移率低的挑战。本文提出了一种Ga2O3还原表面场(RESURF)的无结增强模式场效应晶体管(FET)。在栅极和漏极之间引入n型Ga2O3 RESURF区,提高了击穿电压。非对称栅极结构通过延迟达到临界电场进一步提高击穿电压。本文还研究了导通电阻(RON)随复导区长度变化的变化规律。Ga2O3 RESURF的无结场效应管在高功率集成电路中显示出巨大的应用潜力。
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Improvement in Breakdown Voltage of Junctionless Power Transistor with Ga2O3 RESURF region
From the recent reported studies, it is clear that Ga2O3 can offer higher breakdown voltage due to its higher bandgap. However, Ga2O3 based power devices are having challenges like low carrier concentration and less electron mobility. In this article, a Junctionless Enhancement mode Field Effect Transistor (FET) with Ga2O3 REduced SURface Field (RESURF) is proposed. The introduction of n-type Ga2O3 RESURF region between gate and drain region improves the breakdown voltage. The asymmetric gate structure further enhances the breakdown voltage by delaying the attainment of critical electric field. The variation of on resistance (RON) for varying the length of RESURF region (Lr) is also investigated. Junctionless FET with Ga2O3 RESURF has shown large potential for high power integrated circuit applications.
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