{"title":"GaInP量子阱激光器的微分效率","authors":"P. Smowton, P. Blood","doi":"10.1109/LEOS.1996.565240","DOIUrl":null,"url":null,"abstract":"Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The differential efficiency of GaInP quantum well lasers\",\"authors\":\"P. Smowton, P. Blood\",\"doi\":\"10.1109/LEOS.1996.565240\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.\",\"PeriodicalId\":332726,\"journal\":{\"name\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.1996.565240\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.565240","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The differential efficiency of GaInP quantum well lasers
Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
