Emmanuel Paneerselvam, Sree Harsha Choutapalli, H. Kumar, N. Vasa, D. Nakamura, M. Rao, H. Ikenoue, Tiju Thomas
{"title":"在碳化硅薄膜上同时激光掺杂和退火形成横向pn结二极管结构","authors":"Emmanuel Paneerselvam, Sree Harsha Choutapalli, H. Kumar, N. Vasa, D. Nakamura, M. Rao, H. Ikenoue, Tiju Thomas","doi":"10.1177/25165984211016281","DOIUrl":null,"url":null,"abstract":"Laser-assisted doping of intrinsic silicon carbide (SiC) films deposited on Si (100) substrates by pulsed laser deposition (PLD) method and its influence on simultaneous annealing of the thin film is studied. PLD grown intrinsic SiC films are transformed to p-type SiC and n-type SiC, using laser-assisted doping in aqueous aluminum chloride and phosphoric solutions, respectively. Simultaneous doping and annealing of the SiC film are observed during laser-assisted doping. By precisely positioning the selectively doped region, lateral p–n diodes are formed on the SiC films without using any mask. Electric characteristics confirmed the formation of a lateral p–n diode structure. Numerical analysis of temperature distribution along the depth of the SiC films explains the mechanism of simultaneous doping and annealing during the laser treatment.","PeriodicalId":129806,"journal":{"name":"Journal of Micromanufacturing","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films\",\"authors\":\"Emmanuel Paneerselvam, Sree Harsha Choutapalli, H. Kumar, N. Vasa, D. Nakamura, M. Rao, H. Ikenoue, Tiju Thomas\",\"doi\":\"10.1177/25165984211016281\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Laser-assisted doping of intrinsic silicon carbide (SiC) films deposited on Si (100) substrates by pulsed laser deposition (PLD) method and its influence on simultaneous annealing of the thin film is studied. PLD grown intrinsic SiC films are transformed to p-type SiC and n-type SiC, using laser-assisted doping in aqueous aluminum chloride and phosphoric solutions, respectively. Simultaneous doping and annealing of the SiC film are observed during laser-assisted doping. By precisely positioning the selectively doped region, lateral p–n diodes are formed on the SiC films without using any mask. Electric characteristics confirmed the formation of a lateral p–n diode structure. Numerical analysis of temperature distribution along the depth of the SiC films explains the mechanism of simultaneous doping and annealing during the laser treatment.\",\"PeriodicalId\":129806,\"journal\":{\"name\":\"Journal of Micromanufacturing\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Micromanufacturing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1177/25165984211016281\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micromanufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1177/25165984211016281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films
Laser-assisted doping of intrinsic silicon carbide (SiC) films deposited on Si (100) substrates by pulsed laser deposition (PLD) method and its influence on simultaneous annealing of the thin film is studied. PLD grown intrinsic SiC films are transformed to p-type SiC and n-type SiC, using laser-assisted doping in aqueous aluminum chloride and phosphoric solutions, respectively. Simultaneous doping and annealing of the SiC film are observed during laser-assisted doping. By precisely positioning the selectively doped region, lateral p–n diodes are formed on the SiC films without using any mask. Electric characteristics confirmed the formation of a lateral p–n diode structure. Numerical analysis of temperature distribution along the depth of the SiC films explains the mechanism of simultaneous doping and annealing during the laser treatment.