R. Degraeve, L. Goux, S. Clima, B. Govoreanu, Y. Chen, G. Kar, P. Rousse, G. Pourtois, D. Wouters, L. Altimime, M. Jurczak, G. Groeseneken, J. Kittl
{"title":"模拟和调整RRAM金属氧化物堆中的灯丝特性，以优化稳定循环","authors":"R. Degraeve, L. Goux, S. Clima, B. Govoreanu, Y. Chen, G. Kar, P. Rousse, G. Pourtois, D. Wouters, L. Altimime, M. Jurczak, G. Groeseneken, J. Kittl","doi":"10.1109/VLSI-TSA.2012.6210101","DOIUrl":null,"url":null,"abstract":"Forming current I<sub>form</sub> is a crucial parameter for stable cycling in a HfO<sub>2</sub> RRAM stack. (i) Too low I<sub>form</sub> results in constriction `elongation' for filament current reduction during reset, quickly leading to failure. (ii) Too high and unlimited I<sub>form</sub> leads to poor control of the filament nature expressed as a wide V<sub>0</sub>-distribution in the QPC model. (iii) In between, I<sub>form</sub> is directly correlated to the minimal achievable HRS current and a narrow, stable filament is formed which allows for device scaling as well as multi-level programming.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Modeling and tuning the filament properties in RRAM metal oxide stacks for optimized stable cycling\",\"authors\":\"R. Degraeve, L. Goux, S. Clima, B. Govoreanu, Y. Chen, G. Kar, P. Rousse, G. Pourtois, D. Wouters, L. Altimime, M. Jurczak, G. Groeseneken, J. Kittl\",\"doi\":\"10.1109/VLSI-TSA.2012.6210101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Forming current I<sub>form</sub> is a crucial parameter for stable cycling in a HfO<sub>2</sub> RRAM stack. (i) Too low I<sub>form</sub> results in constriction `elongation' for filament current reduction during reset, quickly leading to failure. (ii) Too high and unlimited I<sub>form</sub> leads to poor control of the filament nature expressed as a wide V<sub>0</sub>-distribution in the QPC model. (iii) In between, I<sub>form</sub> is directly correlated to the minimal achievable HRS current and a narrow, stable filament is formed which allows for device scaling as well as multi-level programming.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling and tuning the filament properties in RRAM metal oxide stacks for optimized stable cycling
Forming current Iform is a crucial parameter for stable cycling in a HfO2 RRAM stack. (i) Too low Iform results in constriction `elongation' for filament current reduction during reset, quickly leading to failure. (ii) Too high and unlimited Iform leads to poor control of the filament nature expressed as a wide V0-distribution in the QPC model. (iii) In between, Iform is directly correlated to the minimal achievable HRS current and a narrow, stable filament is formed which allows for device scaling as well as multi-level programming.
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