{"title":"采用先进的样品制备方案进行高效的原位TEM横截面和平面视图分析","authors":"K. Peng, Kim Hsu, Finn Ger, Tsung-Chang Tsai","doi":"10.1109/IPFA.2018.8452550","DOIUrl":null,"url":null,"abstract":"A novel approach for failure analysis with in situ TEM method is proposed and demonstrated in this work. With an ingenious sample preparation scheme, the approach allows us to perform both plan-view and cross-sectional TEM inspections on the same failure sites in a chip in an efficient way. The sample preparation is not difficult and can be processed with conventional tools. In the beginning, a large-area lamella for plane-view analysis is prepared and the condition of the SEM inspection is appropriately adjusted to enhance the voltage contrast revealed by the failure sites. Then the lamella is further processed by means of FIB milling to enable further examination with the cross-sectional TEM. As compared with the traditional way of preparing TEM P-V samples, this method can save time by more than 70%.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Novel Solution for Efficient in Situ TEM Cross-Section and Plan-View Analyses with An Advanced Sample Preparation Scheme\",\"authors\":\"K. Peng, Kim Hsu, Finn Ger, Tsung-Chang Tsai\",\"doi\":\"10.1109/IPFA.2018.8452550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel approach for failure analysis with in situ TEM method is proposed and demonstrated in this work. With an ingenious sample preparation scheme, the approach allows us to perform both plan-view and cross-sectional TEM inspections on the same failure sites in a chip in an efficient way. The sample preparation is not difficult and can be processed with conventional tools. In the beginning, a large-area lamella for plane-view analysis is prepared and the condition of the SEM inspection is appropriately adjusted to enhance the voltage contrast revealed by the failure sites. Then the lamella is further processed by means of FIB milling to enable further examination with the cross-sectional TEM. As compared with the traditional way of preparing TEM P-V samples, this method can save time by more than 70%.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Novel Solution for Efficient in Situ TEM Cross-Section and Plan-View Analyses with An Advanced Sample Preparation Scheme
A novel approach for failure analysis with in situ TEM method is proposed and demonstrated in this work. With an ingenious sample preparation scheme, the approach allows us to perform both plan-view and cross-sectional TEM inspections on the same failure sites in a chip in an efficient way. The sample preparation is not difficult and can be processed with conventional tools. In the beginning, a large-area lamella for plane-view analysis is prepared and the condition of the SEM inspection is appropriately adjusted to enhance the voltage contrast revealed by the failure sites. Then the lamella is further processed by means of FIB milling to enable further examination with the cross-sectional TEM. As compared with the traditional way of preparing TEM P-V samples, this method can save time by more than 70%.