WSI SRAM的发展进展

R. Bourassa, T. Coffman, J. Brewer
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引用次数: 6

摘要

Inova开发了一款1兆单片静态内存,包含超过500万个晶体管,占地面积约320平方毫米。该产品自1988年3月开始生产,完全符合883C标准,是当今世界上最大的单片生产内存,晶圆良率高达100%。该产品存在于*8和*16组织中,并在1.2 μ p阱CMOS工艺上制造。目前的出货量是每月数万台。本文回顾了Inroute技术、现有产品的现状、Inroute良率模型、Inova 1m SRAM的当前良率信息以及Inova和西屋公司联合开发的实验性单片8兆SRAM,以探索用于军事系统的大面积器件的良率和封装方面。该设计结合了INOVA商用1兆SRAM和西屋公司体积高效的双复合封装方法
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Progress in WSI SRAM development
Inova has developed a one megabit monolithic static RAM which contains over five million transistors and occupies a die area of approximately 320 square mm. This product has been in production since March, 1988, is fully 883C compliant, is the largest monolithic production memory in the world today, and has demonstrated wafer yields as high as 100%. The product exists in both *8 and *16 organizations, and is fabricated on a 1.2 mu P-well CMOS process. Current delivery rates are tens of thousands of devices per month. This paper reviews Inroute technology, the present state of the existing product, the Inroute yield model, current yield information on the Inova 1 M SRAM and an experimental monolithic eight megabit SRAM being developed jointly by INOVA and Westinghouse to explore the yield and packaging aspects of large area devices for use in military systems. The design combines the INOVA commercial one megabit SRAM, and the Westinghouse volumetrically efficient dual composite packaging approach.<>
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