脉冲模式静电驱动CMOS-MEMS谐振器的表征

2010 IEEE International Frequency Control Symposium Pub Date : 2010-06-01 DOI:10.1109/FREQ.2010.5556300

J. Munoz-Gamarra, E. Marigó, J. Giner, A. Uranga, F. Torres, N. Barniol

{"title":"脉冲模式静电驱动CMOS-MEMS谐振器的表征","authors":"J. Munoz-Gamarra, E. Marigó, J. Giner, A. Uranga, F. Torres, N. Barniol","doi":"10.1109/FREQ.2010.5556300","DOIUrl":null,"url":null,"abstract":"Experimental results of a pulsed mode electrostatic excitation on a Double Ended Tunning Fork (DETF) MEMS resonator at 11 MHz fabricated on a commercial standard 0.35um CMOS technology are described. Using small pulse widths of 4 ns, a ten percent power safe and a reduction of the MEMS non-linearities are achieved.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Characterization of CMOS-MEMS resonator by pulsed mode electrostatic actuation\",\"authors\":\"J. Munoz-Gamarra, E. Marigó, J. Giner, A. Uranga, F. Torres, N. Barniol\",\"doi\":\"10.1109/FREQ.2010.5556300\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental results of a pulsed mode electrostatic excitation on a Double Ended Tunning Fork (DETF) MEMS resonator at 11 MHz fabricated on a commercial standard 0.35um CMOS technology are described. Using small pulse widths of 4 ns, a ten percent power safe and a reduction of the MEMS non-linearities are achieved.\",\"PeriodicalId\":344989,\"journal\":{\"name\":\"2010 IEEE International Frequency Control Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Frequency Control Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2010.5556300\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Frequency Control Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2010.5556300","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

描述了在商用标准0.35um CMOS工艺上制作的11 MHz双端音叉(DETF) MEMS谐振器的脉冲模式静电激励实验结果。使用4 ns的小脉冲宽度，实现了10%的功率安全性和减小MEMS非线性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Characterization of CMOS-MEMS resonator by pulsed mode electrostatic actuation

Experimental results of a pulsed mode electrostatic excitation on a Double Ended Tunning Fork (DETF) MEMS resonator at 11 MHz fabricated on a commercial standard 0.35um CMOS technology are described. Using small pulse widths of 4 ns, a ten percent power safe and a reduction of the MEMS non-linearities are achieved.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 IEEE International Frequency Control Symposium

自引率

0.00%

发文量