{"title":"双岛单电子结构的二维数值模型","authors":"I. I. Abramov, S. A. Ignatenko, E. Novik","doi":"10.1109/CRMICO.2002.1137318","DOIUrl":null,"url":null,"abstract":"The two-dimensional numerical models of two-island single-electron structures are developed. The model allows one to achieve good agreement with the experimental data. A comparison with results from other known models is also carried out. The proposed model has been included in the program complex for the simulation of multiple-tunnel junction single-electron devices MTJ-SET-NANODEV.","PeriodicalId":378024,"journal":{"name":"12th International Conference Microwave and Telecommunication Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-dimensional numerical model of two-island single-electron structures\",\"authors\":\"I. I. Abramov, S. A. Ignatenko, E. Novik\",\"doi\":\"10.1109/CRMICO.2002.1137318\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The two-dimensional numerical models of two-island single-electron structures are developed. The model allows one to achieve good agreement with the experimental data. A comparison with results from other known models is also carried out. The proposed model has been included in the program complex for the simulation of multiple-tunnel junction single-electron devices MTJ-SET-NANODEV.\",\"PeriodicalId\":378024,\"journal\":{\"name\":\"12th International Conference Microwave and Telecommunication Technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Conference Microwave and Telecommunication Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2002.1137318\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference Microwave and Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2002.1137318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-dimensional numerical model of two-island single-electron structures
The two-dimensional numerical models of two-island single-electron structures are developed. The model allows one to achieve good agreement with the experimental data. A comparison with results from other known models is also carried out. The proposed model has been included in the program complex for the simulation of multiple-tunnel junction single-electron devices MTJ-SET-NANODEV.
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