Si/Ge量子点的制备与表征

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838532

S. Miyazaki, K. Makihara, A. Ohta, M. Ikeda

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引用次数: 1

摘要

我们已经证明了在高选择性CVD控制下，在热生长的SiO2上高密度形成具有Ge核心的Si量子点。通过发光测量，我们报道了锗核的载流子约束和复合特性。此外，还研究了P δ掺杂对锗核性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Processing and characterization of Si/Ge quantum dots

We have demonstrated high density formation of Si quantum dots with Ge core on thermally-grown SiO2 with control of highly-selective CVD. Through luminescence measurements, we have reported characteristic carrier confinement and recombination properties in the Ge core. Also, an impact of P delta-doping to the Ge core on the properties were shown.

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2016 IEEE International Electron Devices Meeting (IEDM)

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