{"title":"硅MIS结构内嵌表面电位的形成及其对横向电子输运和VAC的影响","authors":"R. Yafarov, D. Nefedov","doi":"10.1109/APEDE.2018.8542454","DOIUrl":null,"url":null,"abstract":"The regularities of the modification of the current-voltage characteristics of MIS structures due to the formation of built-in surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is obtained using microwave plasma microprocessing. Microwave plasma microprocessing was carried out in various chemically active gas media. The interpretation of the effect of surface potentials on transversal electron transport and the steepness of the current-voltage characteristics of silicon MIS devices has been experimentally established and proposed.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Formation and Influence of the Built-In Surface Potentials on the Transversal Electronic Transport and the VAC of Silicon MIS Structures\",\"authors\":\"R. Yafarov, D. Nefedov\",\"doi\":\"10.1109/APEDE.2018.8542454\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The regularities of the modification of the current-voltage characteristics of MIS structures due to the formation of built-in surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is obtained using microwave plasma microprocessing. Microwave plasma microprocessing was carried out in various chemically active gas media. The interpretation of the effect of surface potentials on transversal electron transport and the steepness of the current-voltage characteristics of silicon MIS devices has been experimentally established and proposed.\",\"PeriodicalId\":311577,\"journal\":{\"name\":\"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEDE.2018.8542454\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEDE.2018.8542454","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Formation and Influence of the Built-In Surface Potentials on the Transversal Electronic Transport and the VAC of Silicon MIS Structures
The regularities of the modification of the current-voltage characteristics of MIS structures due to the formation of built-in surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is obtained using microwave plasma microprocessing. Microwave plasma microprocessing was carried out in various chemically active gas media. The interpretation of the effect of surface potentials on transversal electron transport and the steepness of the current-voltage characteristics of silicon MIS devices has been experimentally established and proposed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
