透明全碳纳米管薄膜晶体管

Chunhui Du, Yanyan Deng, Kai Zhu, Yubo Gao, M. Zhang
{"title":"透明全碳纳米管薄膜晶体管","authors":"Chunhui Du, Yanyan Deng, Kai Zhu, Yubo Gao, M. Zhang","doi":"10.1109/NANO.2017.8117262","DOIUrl":null,"url":null,"abstract":"All-carbon-nanotube thin-film transistors (ACNT-TFTs) are proposed and fabricated on a transparent glass substrate by a facile solution-processed method, with 95% enriched semiconducting single-walled carbon nanotubes (SWCNTs) serving as channel materials and mixed SWCNTs as source/drain/gate electrodes. The device demonstrates excellent electronic properties with an on/off current ratio over 105, a threshold voltage of 8 V, a subthreshold swing of 1.13 V/dec, a device mobility of 10 cm2/vs, as well as a transparency of 80%. The proposed device is highly promising for the next-generation display application. Additionally, the facile fabrication method and low-temperature process match well with the requirements for manufacturing.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Transparent all-carbon-nanotube thin-film transistors\",\"authors\":\"Chunhui Du, Yanyan Deng, Kai Zhu, Yubo Gao, M. Zhang\",\"doi\":\"10.1109/NANO.2017.8117262\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"All-carbon-nanotube thin-film transistors (ACNT-TFTs) are proposed and fabricated on a transparent glass substrate by a facile solution-processed method, with 95% enriched semiconducting single-walled carbon nanotubes (SWCNTs) serving as channel materials and mixed SWCNTs as source/drain/gate electrodes. The device demonstrates excellent electronic properties with an on/off current ratio over 105, a threshold voltage of 8 V, a subthreshold swing of 1.13 V/dec, a device mobility of 10 cm2/vs, as well as a transparency of 80%. The proposed device is highly promising for the next-generation display application. Additionally, the facile fabrication method and low-temperature process match well with the requirements for manufacturing.\",\"PeriodicalId\":292399,\"journal\":{\"name\":\"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2017.8117262\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2017.8117262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

采用简单的溶液处理方法在透明玻璃衬底上制备了全碳纳米管薄膜晶体管(acnt - tft),其中95%富集的单壁碳纳米管(SWCNTs)作为沟道材料,混合SWCNTs作为源极/漏极/栅极。该器件具有优异的电子性能,通/关电流比超过105,阈值电压为8 V,亚阈值摆幅为1.13 V/dec,器件迁移率为10 cm2/vs,透明度为80%。该器件在下一代显示应用中具有很高的应用前景。此外,简便的制造方法和低温工艺也很好地满足了制造的要求。
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Transparent all-carbon-nanotube thin-film transistors
All-carbon-nanotube thin-film transistors (ACNT-TFTs) are proposed and fabricated on a transparent glass substrate by a facile solution-processed method, with 95% enriched semiconducting single-walled carbon nanotubes (SWCNTs) serving as channel materials and mixed SWCNTs as source/drain/gate electrodes. The device demonstrates excellent electronic properties with an on/off current ratio over 105, a threshold voltage of 8 V, a subthreshold swing of 1.13 V/dec, a device mobility of 10 cm2/vs, as well as a transparency of 80%. The proposed device is highly promising for the next-generation display application. Additionally, the facile fabrication method and low-temperature process match well with the requirements for manufacturing.
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