InGaAsP器件的晶圆可靠性评估与监控

D. Verbitsky
{"title":"InGaAsP器件的晶圆可靠性评估与监控","authors":"D. Verbitsky","doi":"10.1109/IRWS.2006.305246","DOIUrl":null,"url":null,"abstract":"A simple procedure, evaluating wafer reliability by HALT before full regular processing, is justified and optimized. This procedure is aimed at early failure rate assessment, reliability adjustment, and yield enhancement per customer needs. A test plan concept, detailed design and realization are suggested. Test optimization with respect to customer requirements, field failures, and manufacturing losses are presented. Some regular flaws and recommendations are proposed. The procedure allows significant manufacturing and field savings along with increasing customer satisfaction. The procedure can be extended to manufacturing operation optimization and applied to related GaAs and Si based innovative technologies","PeriodicalId":199223,"journal":{"name":"2006 IEEE International Integrated Reliability Workshop Final Report","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Wafer Reliability Evaluation and Monitoring for InGaAsP Devices\",\"authors\":\"D. Verbitsky\",\"doi\":\"10.1109/IRWS.2006.305246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple procedure, evaluating wafer reliability by HALT before full regular processing, is justified and optimized. This procedure is aimed at early failure rate assessment, reliability adjustment, and yield enhancement per customer needs. A test plan concept, detailed design and realization are suggested. Test optimization with respect to customer requirements, field failures, and manufacturing losses are presented. Some regular flaws and recommendations are proposed. The procedure allows significant manufacturing and field savings along with increasing customer satisfaction. The procedure can be extended to manufacturing operation optimization and applied to related GaAs and Si based innovative technologies\",\"PeriodicalId\":199223,\"journal\":{\"name\":\"2006 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.2006.305246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2006.305246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

在完全正常加工之前,通过HALT对晶圆片可靠性进行评估,并对其进行了验证和优化。该程序旨在根据客户需求进行早期故障率评估、可靠性调整和良率提高。提出了测试方案的概念、详细设计和实现。提出了客户要求、现场故障和制造损失方面的测试优化。提出了一些常规缺陷和建议。该程序可以显著节省制造和现场成本,同时提高客户满意度。该过程可以扩展到制造操作优化,并应用于相关的砷化镓和硅基创新技术
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Wafer Reliability Evaluation and Monitoring for InGaAsP Devices
A simple procedure, evaluating wafer reliability by HALT before full regular processing, is justified and optimized. This procedure is aimed at early failure rate assessment, reliability adjustment, and yield enhancement per customer needs. A test plan concept, detailed design and realization are suggested. Test optimization with respect to customer requirements, field failures, and manufacturing losses are presented. Some regular flaws and recommendations are proposed. The procedure allows significant manufacturing and field savings along with increasing customer satisfaction. The procedure can be extended to manufacturing operation optimization and applied to related GaAs and Si based innovative technologies
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