基于磁致伸缩的石英MEMS射频传感器

X. Pang, Y. Yong, R. Kubena, W. W. Wal, R. Joyce, D. Kirby
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引用次数: 1

摘要

在超高频石英MEMS谐振器的上电极表面镀上磁致伸缩膜后,对磁信号非常敏感。在COMSOL 3D有限元模型中计算了由于外加磁信号引起的谐振腔板上的感应电压。确定了内部磁化和外部H场相对于石英晶体轴的最佳取向。考虑了压电片变形和外加磁场在磁致伸缩膜中引起的自洽耦合应变。讨论了在石英谐振器上沉积Ni(镍)薄膜的磁致伸缩理论和磁致伸缩曲线的表征。磁致伸缩曲线是石英板在外加H场中感应电压的重要决定因素。本文模拟了未镀镍和镀镍后AT-cut谐振腔的响应。报道了355 mhz AT-cut谐振器对外部射频波电分量的响应实验。磁致伸缩Ni涂层AT-cut谐振腔的电响应主导磁响应。电响应灵敏度计算为320 mV/Oe。
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Magnetostrictive-Based Quartz MEMS RF Sensors
AT-cut shear-mode UHF quartz MEMS resonators have been found to be highly sensitive to magnetic signals when magnetostrictive films are deposited on the top electrode surface. The induced voltages across the resonator plates due to applied external magnetic signals have been computed within a COMSOL 3D finite-element model. Optimal orientations of the internal magnetization and polarization of the external H fields relative to the quartz crystalline axes were determined. Self-consistent coupled strains induced in the magnetostrictive film from both the piezoelectric plate deformations and the external magnetic field were included. The theory of magnetostriction and the characterization of magnetostrictive curve of thin-film Ni (nickel) deposited on quartz resonator with the Ni film magnetized either prior or after deposition were discussed. The magnetostriction curve is an important determinant of the induced voltage across the quartz plate in external H fields. Both the responses of the AT-cut resonator without Ni coating and with Ni coating were simulated in this paper. The experimentally observed response of a 355-MHz AT-cut resonator to the electric component of external RF wave was reported. The electric response of magnetostrictive Ni coated AT-cut resonator dominated the magnetic response. The sensitivity of electric response was calculated to be 320 mV/Oe.
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