定向自组装过程中周期性和非周期性图案边界处形态缺陷的控制

A. Yoshida, K. Yoshimoto, M. Ohshima, K. Kodera, Y. Naka, H. Kanai, S. Kobayashi, S. Maeda, Phubes Jiravanichsakul, Katsutoshi Kobayashi, H. Aoyama
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引用次数: 1

摘要

在本研究中,我们以相对简单和廉价的方式研究了一种定向自组装(DSA)流程,该流程可以包括位于周期性线/空间模式之间的非周期性模式(即宽线)。本文采用自然周期性(L0)为30 nm的对称聚苯乙烯-嵌段甲基丙烯酸甲酯(PS-b-PMMA)。我们的DSA流有两个关键特性。首先,我们使用了一种混合方法,将化学外延和石墨外延相结合,直接从ArF抗蚀剂中生成pmma吸引的钉住引导图案。其次,我们尝试利用周期性区域的垂直薄片和非周期性图案上的水平薄片作为蚀刻模板。该工艺的优点是减少了光刻工艺的数量,而挑战在于如何控制周期和非周期区域边界上的混合形貌。我们的初步模拟和实验结果表明,为了在非周期图样上产生水平片层,非周期图样顶部的PS-b-PMMA厚度应大致匹配~1 L0,非周期图样的宽度应大于~3-4 L0。此外,发现周期区和非周期区之间的空间是至关重要的,它应该基本等于周期区(~75 nm)的导针之间的空间,以尽量减少边界处指纹形态的形成。
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Control of morphological defects at the boundary between the periodic and non-periodic patterns in directed self-assembly process
In this study, we investigated a directed self-assembly (DSA) flow that could include a non-periodic pattern (i.e., wide line) lying in between the periodic line/space patterns, in a relatively simple and inexpensive way. A symmetric poly(styrene-block-methyl methacrylate) (PS-b-PMMA) with the natural periodicity (L0) of 30 nm was employed here. Our DSA flow has two key features. First, we used a hybrid approach that combined chemoepitaxy and graphoepitaxy methods to generate PMMA-attractive pinning guide patterns directly from ArF resist. Second, we attempted to utilize both the perpendicular lamellae in the periodic regions and the horizontal lamellae on the non-periodic pattern as an etch template. The advantage of this process will be a reduction of the number of lithographic processes, whereas the challenge is how to control the mixed morphologies at the boundary between the periodic and non-periodic regions. Our preliminary results from simulations and experiments showed that, in order to generate the horizontal lamellae on the non-periodic pattern, the PS-b-PMMA thickness on top of the non-periodic guide pattern should roughly match to ~1 L0, and the width of the non-periodic pattern should be larger than ~3-4 L0. In addition, the space between the periodic and non-periodic regions was found to be critical and it should be basically equal to the space between the guiding pins in the periodic regions (~75 nm) to minimize the formation of fingerprint morphology at the boundaries.
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