GQFN 64L器件集成电路制造过程中的EOS/ESD

Bernard Chin, L. H. Koh
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引用次数: 1

摘要

本文介绍了一个案例研究,在批量生产之前,ESD/EOS事件导致了试验批次的低产量。使用线路ESD审计来检查静电、接地和CDM事件,使用电压尖峰检查和分批测试来确定根本原因。
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EOS/ESD in IC Manufacturing Process of GQFN 64L Devices
This paper presents a case study of ESD/EOS events causing low yield in trial lots prior to the release of volume production. The use of line ESD audits to check for static charge, grounding and CDM events, voltage spike check and split-lot testing were used to determine the root cause.
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