一种用于1.9 GHz个人手持电话系统的高效率，2v单电源电压操作射频前端MMIC

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722631

K. Choumei, K. Yamamoto, N. Kasai, T. Moriwaki, Y. Yoshii, T. Fujii, J. Otsuji, Y. Miyazaki, N. Tanino, K. Sato

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引用次数: 5

摘要

利用平面自对准栅极场效应管(SAG)开发了一种用于1.9 GHz日本个人手持电话系统(PHS)的高效极低电压MMIC。MMIC集成了一个功率放大器(PA)、一个低噪声放大器(LNA)、一个收发开关(SW)和一个负电压发生器(NVG)。在输出功率为21.0 dBm时，MMIC的功率附加效率高达39%，这是迄今为止报道的2.0 V单电源电压工作射频前端MMIC的最高效率。

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A high efficiency, 2 V single-supply voltage operation RF front-end MMIC for 1.9 GHz Personal Handy Phone Systems

A high efficiency and very low voltage operation MMIC using planar self-aligned gate (SAG) FET has been developed for the 1.9 GHz Japanese Personal Handy Phone System (PHS). The MMIC integrates a power amplifier (PA), a low noise amplifier (LNA), a T/R switch (SW) and a negative voltage generator (NVG). The MMIC exhibited high power added efficiency of 39% at the output power (Pout) of 21.0 dBm, which is the highest efficiency in the 2.0 V single supply voltage operation RF front-end MMIC ever reported.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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