ii-vi和iii-v半导体的体积模量

M. Sudan, Dutta Mritunjai, Kr. Pathak Rajednra, Nath Sinha, Ashok Kumar Gupta, P. Mahto
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引用次数: 0

摘要

:本文提出了用键合硬度来计算III -V和II-VI结构的锌闪锌矿半导体的体积模量的半经验公式。用四面体半导体的价电子数、共价/离子半径和键原子配位数计算键硬度。为了计算合成键的硬度,分别计算了共价和离子对键硬度的贡献。利用所提出的关系得到的结果与其他研究者的实验和理论值吻合得很好。
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BULK MODULUS OF II-VI AND III-V SEMICONDUCTORS
: A semi-empirical formula has been proposed in this paper to calculate bulk modulus of Zinc blende structured III -V and II-VI semiconductors in terms of bond hardness. Bond hardness is calculated using valence electron number, covalent / ionic radius and co-ordination number of bonded atoms of the tetrahedral semiconductors. To calculate the resultant bond hardness covalent and ionic contributions to bond hardness are separately calculated. Results obtained using the proposed relation agrees well with the experimental and theoretical values of other researchers.
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