J. Müller, J. Hauck, B. Shen, S. Romero-García, E. Islamova, S. Sharif Azadeh, S. Joshi, N. Chimot, A. Moscoso-Mártir, F. Merget, F. Lelarge, J. Witzens
{"title":"基于谐振环调制器和半导体锁模激光器的硅光子WDM互连","authors":"J. Müller, J. Hauck, B. Shen, S. Romero-García, E. Islamova, S. Sharif Azadeh, S. Joshi, N. Chimot, A. Moscoso-Mártir, F. Merget, F. Lelarge, J. Witzens","doi":"10.1117/12.2080769","DOIUrl":null,"url":null,"abstract":"We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser\",\"authors\":\"J. Müller, J. Hauck, B. Shen, S. Romero-García, E. Islamova, S. Sharif Azadeh, S. Joshi, N. Chimot, A. Moscoso-Mártir, F. Merget, F. Lelarge, J. Witzens\",\"doi\":\"10.1117/12.2080769\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.\",\"PeriodicalId\":432115,\"journal\":{\"name\":\"Photonics West - Optoelectronic Materials and Devices\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Photonics West - Optoelectronic Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2080769\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photonics West - Optoelectronic Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2080769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser
We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.