P. Paillet, J. Touron, J. Leray, C. Cirba, A. Michez
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Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO/sub 2/
Charge trapping on several energy levels and thermally activated detrapping phenomena in SiO/sub 2/ have been determined by finite elements simulation. The results obtained agree well with experimental charge detrapping measurements, and enable the simulation of post-irradiation effects in Si/SiO/sub 2/ structures.
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