用于高频和高功率应用的GaN HEMT的最新进展

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2012-11-01 DOI:10.1109/RFIT.2012.6401645

M. Kanamura, T. Ohki, T. Kikkawa, K. Imanishi, K. Watanabe, K. Joshin

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引用次数: 7

摘要

在本文中，我们描述了用于高频和高功率应用的GaN HEMT技术的最新进展。首先，我们介绍了用于基站应用的GaN HEMT技术。然后，讨论了射频工作过程中的电流漂移现象。我们还介绍了正常关闭GaN hemt的器件技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent progress in GaN HEMT for high-frequency and high-power applications

In this paper, we describe the recent progress in GaN HEMT technology for high-frequency and high-power applications. First, we present the GaN HEMT technology for base-station applications. Then, we discuss the current drift phenomena during RF operation. We also present the device technology for normally off GaN HEMTs.

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2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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