{"title":"在4 GHz下具有5 PPM长期频率稳定性的介电谐振振荡器","authors":"J. Plourde, D. Linn, I. Tatsuguchi, C. Swan","doi":"10.1109/MWSYM.1977.1124432","DOIUrl":null,"url":null,"abstract":"High Q, temperature stable dielectric resonators are excellent stabilizing elements for microwave transistor oscillators. A 4 GHz Ba/sub 2/Ti/sub 9/O/sub 20/ resonator integrated with a Si bipolar transistor in a compact oven has a frequency stability of 5 ppm/yr., 4/spl deg/ to 60/spl deg/C (40 to 140/spl deg/F). It is significantly simpler than alternative generators and has 10 to 20 dB lower FM noise. An 18 GHz generator is also described which uses a 4.5 GHz oscillator and a varactor quadrupler.","PeriodicalId":299607,"journal":{"name":"1977 IEEE MTT-S International Microwave Symposium Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"A Dielectric Resonator Oscillator with 5 PPM Long Term Frequency Stability at 4 GHz\",\"authors\":\"J. Plourde, D. Linn, I. Tatsuguchi, C. Swan\",\"doi\":\"10.1109/MWSYM.1977.1124432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High Q, temperature stable dielectric resonators are excellent stabilizing elements for microwave transistor oscillators. A 4 GHz Ba/sub 2/Ti/sub 9/O/sub 20/ resonator integrated with a Si bipolar transistor in a compact oven has a frequency stability of 5 ppm/yr., 4/spl deg/ to 60/spl deg/C (40 to 140/spl deg/F). It is significantly simpler than alternative generators and has 10 to 20 dB lower FM noise. An 18 GHz generator is also described which uses a 4.5 GHz oscillator and a varactor quadrupler.\",\"PeriodicalId\":299607,\"journal\":{\"name\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1977.1124432\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1977.1124432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Dielectric Resonator Oscillator with 5 PPM Long Term Frequency Stability at 4 GHz
High Q, temperature stable dielectric resonators are excellent stabilizing elements for microwave transistor oscillators. A 4 GHz Ba/sub 2/Ti/sub 9/O/sub 20/ resonator integrated with a Si bipolar transistor in a compact oven has a frequency stability of 5 ppm/yr., 4/spl deg/ to 60/spl deg/C (40 to 140/spl deg/F). It is significantly simpler than alternative generators and has 10 to 20 dB lower FM noise. An 18 GHz generator is also described which uses a 4.5 GHz oscillator and a varactor quadrupler.
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