{"title":"在39MHz晶体振荡器中,通过抗变啁啾注入(CI)和负电阻增压器(NRB)减少92%的启动时间","authors":"S. Iguchi, H. Fuketa, T. Sakurai, M. Takamiya","doi":"10.1109/VLSIC.2014.6858449","DOIUrl":null,"url":null,"abstract":"To reduce the start-up time of a crystal oscillator (XO), a chirp injection (CI) and a negative resistance booster (NRB) are proposed. By combining CI and NRB, the measured start-up time of a 39-MHz XO in 180-nm CMOS is reduced by 92% from 2.1ms to 158μs, which is the shortest time in the published XO's. The measured start-up time variations due to the ±20% supply voltage change or the temperature change are less than 13%.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"184 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"92% start-up time reduction by variation-tolerant chirp injection (CI) and negative resistance booster (NRB) in 39MHz crystal oscillator\",\"authors\":\"S. Iguchi, H. Fuketa, T. Sakurai, M. Takamiya\",\"doi\":\"10.1109/VLSIC.2014.6858449\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To reduce the start-up time of a crystal oscillator (XO), a chirp injection (CI) and a negative resistance booster (NRB) are proposed. By combining CI and NRB, the measured start-up time of a 39-MHz XO in 180-nm CMOS is reduced by 92% from 2.1ms to 158μs, which is the shortest time in the published XO's. The measured start-up time variations due to the ±20% supply voltage change or the temperature change are less than 13%.\",\"PeriodicalId\":381216,\"journal\":{\"name\":\"2014 Symposium on VLSI Circuits Digest of Technical Papers\",\"volume\":\"184 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Symposium on VLSI Circuits Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2014.6858449\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Symposium on VLSI Circuits Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2014.6858449","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
92% start-up time reduction by variation-tolerant chirp injection (CI) and negative resistance booster (NRB) in 39MHz crystal oscillator
To reduce the start-up time of a crystal oscillator (XO), a chirp injection (CI) and a negative resistance booster (NRB) are proposed. By combining CI and NRB, the measured start-up time of a 39-MHz XO in 180-nm CMOS is reduced by 92% from 2.1ms to 158μs, which is the shortest time in the published XO's. The measured start-up time variations due to the ±20% supply voltage change or the temperature change are less than 13%.