纳米技术中新的金属填充考虑

Xiaopeng Dong, Inhwan Seo, W. Kao
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引用次数: 5

摘要

使用金属填充插入来创建统一的互连布局模式,以最大限度地减少地形变化,是纳米技术广泛采用的实践。本文介绍了利用时序感知方法实现最大金属密度均匀性同时最小化对芯片时序影响的新进展和注意事项。它还描述了一个完整的综合金属填充方法,包括金属填充插入,金属填充修剪和金属密度验证。最后还介绍了一些客户要求的新功能,如交错模式金属填充和电源捆扎
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New metal fill considerations for nanometer technologies
The use of metal fill insertion to create a uniform interconnect layout pattern that minimizes topographical variation is a widely adopted practice for nanometer technologies. This paper presents new advances and considerations to achieve maximum metal density uniformity while minimizing impact on chip timing by using timing aware methods. It also describes a full comprehensive metal fill methodology which includes metal fill insertion, metal fill trimming and metal density verification. Finally some new customer requested features such as staggered pattern metal fill and power strapping are also described
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