InGaAsP双异质结构双极晶体管的低功耗高增益

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. Pub Date : 1987-08-10 DOI:10.1109/CORNEL.1987.721240

M. Svilans, D. Day

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摘要

光子器件(二极管激光器，光电二极管)与电子增益元件(晶体管)的集成在InP上特别有趣。该系统中InGaAsP的带隙与常用的1300nm和1550nm光传输波长兼容，半绝缘衬底可用于器件间电隔离，并且易于使用材料选择性湿化学蚀刻剂控制多层加工。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High Gain At Low Power in InGaAsP Double-Heterostructure Bipolar Transistors

The integration of photonic devices (diode lasers, photodiodes) with electronic gain elements (transistors) is particularly interesting on InP. The band-gap of InGaAsP in this system is compatible with the commonly used 1300nm and 1550nm optical transmission wavelengths, a semi-insulating substrate is available for inter-device electrical isolation and multi-layer processing is easily controlled with accessible materialselective wet chemical etchants.

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IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.

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