H. Miura, N. Iwata, N. Toyoshima, Y. Hayashi, K. Takeuchi, T. Mori, I. Hirosawa
{"title":"ZnS-SiO2薄膜结构分析及热模光刻成型学研究","authors":"H. Miura, N. Iwata, N. Toyoshima, Y. Hayashi, K. Takeuchi, T. Mori, I. Hirosawa","doi":"10.1109/ODS.2006.1632741","DOIUrl":null,"url":null,"abstract":"A tetrahedral network structure like ZnS crystal is found to exist in the amorphous ZnS-SiO2 thin film. It is considered that the etching selectivity in as-deposited and annealed ZnS-SiO2 thin film becomes large due to the growth of ZnS crystals by annealing. There is optimum mixture rate of ZnS for patterning of Zns-SiO2 thin film by the heat-mode lithography, and the ZnS-SiO2 dots with clear and smooth edges were formed with increasing in the ZnS mixture rate to 80%","PeriodicalId":332569,"journal":{"name":"2006 Optical Data Storage Topical Meeting","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Structure Analysis of ZnS-SiO2 Thin Film and Patterning by Heat-Mode Lithography\",\"authors\":\"H. Miura, N. Iwata, N. Toyoshima, Y. Hayashi, K. Takeuchi, T. Mori, I. Hirosawa\",\"doi\":\"10.1109/ODS.2006.1632741\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A tetrahedral network structure like ZnS crystal is found to exist in the amorphous ZnS-SiO2 thin film. It is considered that the etching selectivity in as-deposited and annealed ZnS-SiO2 thin film becomes large due to the growth of ZnS crystals by annealing. There is optimum mixture rate of ZnS for patterning of Zns-SiO2 thin film by the heat-mode lithography, and the ZnS-SiO2 dots with clear and smooth edges were formed with increasing in the ZnS mixture rate to 80%\",\"PeriodicalId\":332569,\"journal\":{\"name\":\"2006 Optical Data Storage Topical Meeting\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Optical Data Storage Topical Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ODS.2006.1632741\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Optical Data Storage Topical Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ODS.2006.1632741","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structure Analysis of ZnS-SiO2 Thin Film and Patterning by Heat-Mode Lithography
A tetrahedral network structure like ZnS crystal is found to exist in the amorphous ZnS-SiO2 thin film. It is considered that the etching selectivity in as-deposited and annealed ZnS-SiO2 thin film becomes large due to the growth of ZnS crystals by annealing. There is optimum mixture rate of ZnS for patterning of Zns-SiO2 thin film by the heat-mode lithography, and the ZnS-SiO2 dots with clear and smooth edges were formed with increasing in the ZnS mixture rate to 80%
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