950MHz GaAs异质结双极晶体管混频器的性能和大信号建模

1992 22nd European Microwave Conference Pub Date : 1992-10-01 DOI:10.1109/EUMA.1992.335869

B. A. Xavier, C. Aitchison

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引用次数: 0

摘要

讨论了一种GaAs异质结双极晶体管(HBT)单端有源混频器。采用大信号HBT模型进行了仿真。介绍了一种将HBT直流方程集成到大型信号模拟器中的新方法。转换增益和互调特性的预测值都在测量值的±3dB以内。该器件在调谐状态下的互调性能优于电阻式MESFET和HEMT混频器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance and Large Signal Modelling of a GaAs Heterojunction Bipolar Transistor Mixer at 950MHz

A GaAs heterojunction bipolar transistor (HBT) single ended active mixer is discussed. Simulations are performed using a large signal HBT model. A novel way of incorporating the d.c equations of an HBT into a large signal simulator is described. Both conversion gain and intermodulation properties are predicted to within ±3dB of measured values. The measured intermodulation performance of the device in a tuned state is superior to both a resistive MESFET and HEMT mixer.

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1992 22nd European Microwave Conference

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