采用交叉耦合CMOS对的2.4 GHz频段SOI-CMOS大功率桥式整流集成电路

2021 IEEE Wireless Power Transfer Conference (WPTC) Pub Date : 2021-06-01 DOI:10.1109/WPTC51349.2021.9458162

Atsuya Hirono, Yuki Muramoto, Shunya Tsuchimoto, Naoki Sakai, K. Itoh

{"title":"采用交叉耦合CMOS对的2.4 GHz频段SOI-CMOS大功率桥式整流集成电路","authors":"Atsuya Hirono, Yuki Muramoto, Shunya Tsuchimoto, Naoki Sakai, K. Itoh","doi":"10.1109/WPTC51349.2021.9458162","DOIUrl":null,"url":null,"abstract":"This paper describes the 2.4GHz band SOI-CMOS high power bridge rectifier IC with the cross coupled CMOS pair (CCP). At first of all, topologies of the rectifier diodes are investigated for improvement of rectifier efficiency and handling power. It is clarified that the CCP has advantages on low threshold and breakdown voltages compared with the gated anode diode (GAD). The developed bridge rectifier IC achieves rectification efficiency of 51% at input power of 25 dBm. This is top efficiency in sub-W class CMOS rectifier ICs.","PeriodicalId":130306,"journal":{"name":"2021 IEEE Wireless Power Transfer Conference (WPTC)","volume":"241 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The 2.4 GHz band SOI-CMOS high power bridge rectifier IC with the cross coupled CMOS pair\",\"authors\":\"Atsuya Hirono, Yuki Muramoto, Shunya Tsuchimoto, Naoki Sakai, K. Itoh\",\"doi\":\"10.1109/WPTC51349.2021.9458162\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the 2.4GHz band SOI-CMOS high power bridge rectifier IC with the cross coupled CMOS pair (CCP). At first of all, topologies of the rectifier diodes are investigated for improvement of rectifier efficiency and handling power. It is clarified that the CCP has advantages on low threshold and breakdown voltages compared with the gated anode diode (GAD). The developed bridge rectifier IC achieves rectification efficiency of 51% at input power of 25 dBm. This is top efficiency in sub-W class CMOS rectifier ICs.\",\"PeriodicalId\":130306,\"journal\":{\"name\":\"2021 IEEE Wireless Power Transfer Conference (WPTC)\",\"volume\":\"241 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE Wireless Power Transfer Conference (WPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WPTC51349.2021.9458162\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Wireless Power Transfer Conference (WPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WPTC51349.2021.9458162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

介绍了一种采用交叉耦合CMOS对(CCP)的2.4GHz频段SOI-CMOS大功率桥式整流集成电路。首先，研究了整流二极管的拓扑结构，以提高整流效率和处理功率。阐明了与门控阳极二极管(GAD)相比，CCP具有低阈值和击穿电压的优点。所研制的桥式整流集成电路在输入功率为25 dBm时，整流效率可达51%。这是亚w级CMOS整流ic的最高效率。

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The 2.4 GHz band SOI-CMOS high power bridge rectifier IC with the cross coupled CMOS pair

This paper describes the 2.4GHz band SOI-CMOS high power bridge rectifier IC with the cross coupled CMOS pair (CCP). At first of all, topologies of the rectifier diodes are investigated for improvement of rectifier efficiency and handling power. It is clarified that the CCP has advantages on low threshold and breakdown voltages compared with the gated anode diode (GAD). The developed bridge rectifier IC achieves rectification efficiency of 51% at input power of 25 dBm. This is top efficiency in sub-W class CMOS rectifier ICs.

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2021 IEEE Wireless Power Transfer Conference (WPTC)

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