{"title":"利用分析/图形技术优化分布式单片砷化镓放大器","authors":"M. Ross, R. Harrison","doi":"10.1109/MWSYM.1988.22055","DOIUrl":null,"url":null,"abstract":"An analytical/graphical procedure is presented that provides a close approximation to the optimum design of a distributed monolithic GaAs amplifier, given specific gain and 1-dB bandwidth requirements. The technique gives the optimum number of stages, the FET dimensions, and the values of the lumped inductors used to realize the artificial transmission lines.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"313 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Optimization of distributed monolithic GaAs amplifiers using an analytical/graphical technique\",\"authors\":\"M. Ross, R. Harrison\",\"doi\":\"10.1109/MWSYM.1988.22055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical/graphical procedure is presented that provides a close approximation to the optimum design of a distributed monolithic GaAs amplifier, given specific gain and 1-dB bandwidth requirements. The technique gives the optimum number of stages, the FET dimensions, and the values of the lumped inductors used to realize the artificial transmission lines.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"313 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of distributed monolithic GaAs amplifiers using an analytical/graphical technique
An analytical/graphical procedure is presented that provides a close approximation to the optimum design of a distributed monolithic GaAs amplifier, given specific gain and 1-dB bandwidth requirements. The technique gives the optimum number of stages, the FET dimensions, and the values of the lumped inductors used to realize the artificial transmission lines.<>
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