双极线性微电路辐照前热应力的总剂量敏感性机制

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698890

R. Pease, M. Shaneyfelt, P. Winokur, D. Fleetwood, J. Gorelick, S. McClure, S. Clark, L. Cohn, D. Alexander

{"title":"双极线性微电路辐照前热应力的总剂量敏感性机制","authors":"R. Pease, M. Shaneyfelt, P. Winokur, D. Fleetwood, J. Gorelick, S. McClure, S. Clark, L. Cohn, D. Alexander","doi":"10.1109/RADECS.1997.698890","DOIUrl":null,"url":null,"abstract":"The ionizing radiation response of several semiconductor process technologies has been shown to be affected by preirradiation thermal stress. Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits\",\"authors\":\"R. Pease, M. Shaneyfelt, P. Winokur, D. Fleetwood, J. Gorelick, S. McClure, S. Clark, L. Cohn, D. Alexander\",\"doi\":\"10.1109/RADECS.1997.698890\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ionizing radiation response of several semiconductor process technologies has been shown to be affected by preirradiation thermal stress. Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS.\",\"PeriodicalId\":106774,\"journal\":{\"name\":\"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1997.698890\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1997.698890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 26

摘要

几种半导体工艺的电离辐射响应已被证明受到辐照前热应力的影响。双极线性电路的数据在先前提出的CMOS机制方面进行了介绍和讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits

The ionizing radiation response of several semiconductor process technologies has been shown to be affected by preirradiation thermal stress. Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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