AlGaN/GaN凹槽欧姆接触的表征

Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI:10.1109/ICMTS.2015.7106133

M. Hajłasz, J. Donkers, S. Sque, S. Heil, D. Gravesteijn, F. Rietveld, J. Schmitz

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引用次数: 4

摘要

本文讨论了AlGaN/GaN凹槽欧姆触点的测试结构和表征方法的选择。结果表明，在最坏的情况下，假定触点之间和触点下方的片状电阻相同，可导致提取的具体接触电阻误差高达3000 %。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of recessed Ohmic contacts to AlGaN/GaN

In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to 3000 % in the extracted specific contact resistance.

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Proceedings of the 2015 International Conference on Microelectronic Test Structures

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