{"title":"高压LDMOS的功耗分析","authors":"Xiulong Wu, Junning Chen, Daoming Ke","doi":"10.1109/ICIEA.2007.4318536","DOIUrl":null,"url":null,"abstract":"According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented.","PeriodicalId":231682,"journal":{"name":"2007 2nd IEEE Conference on Industrial Electronics and Applications","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of High Voltage LDMOS Power Consumption\",\"authors\":\"Xiulong Wu, Junning Chen, Daoming Ke\",\"doi\":\"10.1109/ICIEA.2007.4318536\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented.\",\"PeriodicalId\":231682,\"journal\":{\"name\":\"2007 2nd IEEE Conference on Industrial Electronics and Applications\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 2nd IEEE Conference on Industrial Electronics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIEA.2007.4318536\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 2nd IEEE Conference on Industrial Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIEA.2007.4318536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
