Engineering Of Spike Doped HEMT Characteristics Through Recess Etch Considerations

Differing requirements sometimes exist for the characteristics of the gate recess in HEMT and MESFET devices. In particular, the requirements of low noise and high power put different constraints on device design. Low noise applications typically require a minimum in the parasitic source and gate resistance with other related considerations being secondary. Power applications, on the other hand, require the minimization in undepleted charge in the channel to achieve maximum breakdown voltage. Device capacitance is an important consideration in both cases.