基于65纳米CMOS技术的组合选择错配校准的温度行为

J. Marku, J. Poikonen, A. Paasio
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引用次数: 0

摘要

讨论了基于组合选择的失配校准的温度行为。已经给出了标定结构的功能。采用基于微调晶体管组合选择的失配校准,在实现面积和精度上都有明显的优势。然而,由于精度要求高,必须考虑温度的影响。采用数字65纳米CMOS技术,开发、设计并仿真了基于组合选择的失配校准温度补偿电路。新的温度补偿和失配校准电流源在40摄氏度的温度范围内达到99%的4σ置信度精度。这个范围仍然可以通过以20摄氏度的间隔重新校准电流源来扩展。
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Temperature behavior of combination selection based mismatch calibration with 65 nm CMOS technology
The temperature behaviour of a combination selection based mismatch calibration is discussed. The functionality of the calibration structure has already been presented. Clear benefits in implementation area and accuracy can be reached when using mismatch calibration based on combination selection of fine-tuning transistors. However, with the high accuracy requirements, the effects of temperature must be taken into the account. Temperature compensation circuitry for combination selection based mismatch calibration is developed, designed and simulated in digital 65 nm CMOS technology. The new temperature compensated and mismatch calibrated current source achieves 99% accuracy in 4σ confidence over the temperature range of 40 degrees in centigrade. This range can still be extended by recalibrating the current source in intervals of 20 degrees in centigrade.
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