{"title":"功率GaAs mesfet栅极金属化的可靠性","authors":"K. Katsukawa, Y. Kose, M. Kanamori, S. Sando","doi":"10.1109/IRPS.1984.362020","DOIUrl":null,"url":null,"abstract":"Failure modes have been studied on 0.5 ¿m gate power GaAs MESFETs with Al, Ti/Al and Ti/Al/Ti gate metallization, respectively. It has been found that the dominant failure modes are gate metal disconnection for Al gate, catastrophic burn out for the Ti/Al gate and gate breakdown voltage degradation for the Ti/Al/Ti gate under D.C. operational life tests. The degradation mechanisms have been clarified using SEM, microprobe-AES and SIMS. It is shown that Ti/Al, gate is the most reliable among these three kinds of FETS.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Reliability of Gate Metallization in Power GaAs MESFETs\",\"authors\":\"K. Katsukawa, Y. Kose, M. Kanamori, S. Sando\",\"doi\":\"10.1109/IRPS.1984.362020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Failure modes have been studied on 0.5 ¿m gate power GaAs MESFETs with Al, Ti/Al and Ti/Al/Ti gate metallization, respectively. It has been found that the dominant failure modes are gate metal disconnection for Al gate, catastrophic burn out for the Ti/Al gate and gate breakdown voltage degradation for the Ti/Al/Ti gate under D.C. operational life tests. The degradation mechanisms have been clarified using SEM, microprobe-AES and SIMS. It is shown that Ti/Al, gate is the most reliable among these three kinds of FETS.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362020\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability of Gate Metallization in Power GaAs MESFETs
Failure modes have been studied on 0.5 ¿m gate power GaAs MESFETs with Al, Ti/Al and Ti/Al/Ti gate metallization, respectively. It has been found that the dominant failure modes are gate metal disconnection for Al gate, catastrophic burn out for the Ti/Al gate and gate breakdown voltage degradation for the Ti/Al/Ti gate under D.C. operational life tests. The degradation mechanisms have been clarified using SEM, microprobe-AES and SIMS. It is shown that Ti/Al, gate is the most reliable among these three kinds of FETS.
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