{"title":"高达50 GHz的GaAs pHEMT行波放大器","authors":"D. Danilov, A.V. Zdov, T.M. Batoev, N. Malyutin","doi":"10.1109/SIBCON56144.2022.10003003","DOIUrl":null,"url":null,"abstract":"The article presents the results of the development of two ultra-wideband traveling wave amplifiers. These monolithic microwave integrated circuits (MMICs) were developed using gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology. One was designed based on a 0.25 $\\mu$m GaAs pHEMT process with gain up to 30 GHz, and the other based on a 0.1 $\\mu$m GaAs pHEMT process up to 50 GHz. The measured S-parameters for the first MMIC show a gain (S21) of 15±1.5dB in the frequency range 0-30 GHz, input and output return loss (S11, S22) less than -11dB. The measured S-parameters for the second MMIC show a gain of more than 11.5 dB in the frequency range of 0-50 GHz, input and output return loss of less than -9dB.","PeriodicalId":265523,"journal":{"name":"2022 International Siberian Conference on Control and Communications (SIBCON)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaAs pHEMT Traveling Wave Amplifiers up to 50 GHz\",\"authors\":\"D. Danilov, A.V. Zdov, T.M. Batoev, N. Malyutin\",\"doi\":\"10.1109/SIBCON56144.2022.10003003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The article presents the results of the development of two ultra-wideband traveling wave amplifiers. These monolithic microwave integrated circuits (MMICs) were developed using gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology. One was designed based on a 0.25 $\\\\mu$m GaAs pHEMT process with gain up to 30 GHz, and the other based on a 0.1 $\\\\mu$m GaAs pHEMT process up to 50 GHz. The measured S-parameters for the first MMIC show a gain (S21) of 15±1.5dB in the frequency range 0-30 GHz, input and output return loss (S11, S22) less than -11dB. The measured S-parameters for the second MMIC show a gain of more than 11.5 dB in the frequency range of 0-50 GHz, input and output return loss of less than -9dB.\",\"PeriodicalId\":265523,\"journal\":{\"name\":\"2022 International Siberian Conference on Control and Communications (SIBCON)\",\"volume\":\"126 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Siberian Conference on Control and Communications (SIBCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON56144.2022.10003003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Siberian Conference on Control and Communications (SIBCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON56144.2022.10003003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The article presents the results of the development of two ultra-wideband traveling wave amplifiers. These monolithic microwave integrated circuits (MMICs) were developed using gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology. One was designed based on a 0.25 $\mu$m GaAs pHEMT process with gain up to 30 GHz, and the other based on a 0.1 $\mu$m GaAs pHEMT process up to 50 GHz. The measured S-parameters for the first MMIC show a gain (S21) of 15±1.5dB in the frequency range 0-30 GHz, input and output return loss (S11, S22) less than -11dB. The measured S-parameters for the second MMIC show a gain of more than 11.5 dB in the frequency range of 0-50 GHz, input and output return loss of less than -9dB.
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