脉冲条件下异质结双极晶体管的非线性射频特性与建模

1994 24th European Microwave Conference Pub Date : 1994-10-01 DOI:10.1109/EUMA.1994.337448

J. Viaud, R. Sommet, J. Teyssier, D. Floriot, R. Quéré

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引用次数: 9

摘要

在电流高达105安培/平方厘米的异质结双极晶体管上进行了I(V)和s参数脉冲测量。在整个设备输出域中采集s参数数据。因此，在汤姆逊CSF中心研究实验室处理的GaInP/GaAs HBT晶体管上，通过I(V)和RF脉冲测量获得了非线性直流到射频一致模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nonlinear RF Characterization and Modeling of Heterojunction Bipolar Transistors Under Pulsed Conditions

I(V) and S-parameters pulsed measurments have been performed on a heterojunction bipolar transistor for currents up to 105 Amps/cm2. S-parameters data have been acquired in the whole device output domain. So, a nonlinear DC to RF consistent model has been obtained with I(V) and RF pulsed measurements on a GaInP/GaAs HBT transistor, processed by the central research laboratory of Thomson CSF.

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1994 24th European Microwave Conference

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